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FX3ASJ-3 Scheda tecnica(PDF) 2 Page - Powerex Power Semiconductors

Il numero della parte FX3ASJ-3
Spiegazioni elettronici  Pch POWER MOSFET HIGH-SPEED SWITCHING USE
PDF  4 Pages
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Produttore elettronici  POWEREX [Powerex Power Semiconductors]
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FX3ASJ-3 Scheda tecnica(HTML) 2 Page - Powerex Power Semiconductors

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PRELIMINARY
Notice:
This
is not
a final
specification.
Some
parametric
limits
are
subject
to change.
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX3ASJ-3
HIGH-SPEED SWITCHING USE
PERFORMANCE CURVES
0
10
20
30
40
50
0
200
50
100
150
–2
–3
–10–1
–5
–7
–100
–2
–3
–5
–7
–101
–2
–3
–5
–7
–101 –2
–102
–3 –5 –7
–2
–103
–3 –5 –7
–2
–2 –3 –5 –7
–2
tw = 10
µs
TC = 25°C
Single Pulse
100
µs
10ms
1ms
DC
0
–2
–4
–6
–8
–10
0
–4
–8
–12
–16
–20
Tc = 25°C
Pulse Test
PD = 30W
VGS = –10V
–4V
–3V
–5V
–6V
0
–1.0
–2.0
–3.0
–4.0
–5.0
0
–2–4–6–8
–10
–6V
–4V
PD = 30W
VGS = –10V
–3V
–2.5V
–5V
Tc = 25°C
Pulse Test
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE TC (°C)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
V
µA
mA
V
Ω
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
–150
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–1.5
0.93
1.02
–0.93
3.0
1170
81
31
9
7
82
33
–1.0
—
80
—
±0.1
–0.1
–2.0
1.20
1.32
–1.20
—
—
—
—
—
—
—
—
–1.5
4.17
—
ID = –1mA, VGS = 0V
VGS =
±20V, VDS = 0V
VDS = –150V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –1A, VGS = –10V
ID = –1A, VGS = –4V
ID = –1A, VGS = –10V
ID = –1A, VDS = –5V
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –80V, ID = –1A, VGS = –10V, RGEN = RGS = 50
Ω
IS = –1A, VGS = 0V
Channel to case
IS = –3A, dis/dt = 100A/
µs
ELECTRICAL CHARACTERISTICS (Tch = 25
°C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.



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