1SS321

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS321

Low Voltage High Speed Switching

Low forward voltage

Low reverse current

Small package

: SC-59 (SOT-23MOD)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

12

V

Reverse voltage

10

V

Maximum (peak) forward current

150 (*)

mA

Average forward current

50 (*)

mA

Surge current (10ms)

1000 (*)

mA

Power dissipation

P

150

mW

Junction temperature

125

°C

Storage temperature

−55

∼125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

(*)

Unit rating. Total rating = unit rating × 1.5.

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

―

―

0.32

―

―

―

0.42

―

Forward voltage

―

―

0.63

1.00

V

Reverse current

―

―

―

500

nA

Total capacitance

―

―

3.2

4.5

pF

Marking

Unit: mm

JEDEC

SOT−23MOD

EIAJ

SC−59

TOSHIBA

1−3G1F

Weight: 0.012g