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2SC5906 Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor

Il numero della parte 2SC5906
Spiegazioni elettronici  Silicon NPN Epitaxial Type High-Speed Switching Applications
PDF  5 Pages
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC5906 Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor

  2SC5906 Datasheet HTML 1Page - Toshiba Semiconductor 2SC5906 Datasheet HTML 2Page - Toshiba Semiconductor 2SC5906 Datasheet HTML 3Page - Toshiba Semiconductor 2SC5906 Datasheet HTML 4Page - Toshiba Semiconductor 2SC5906 Datasheet HTML 5Page - Toshiba Semiconductor  
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2SC5906
2006-11-13
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
⎯
⎯
0.1
μA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
⎯
⎯
0.1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
30
⎯
⎯
V
hFE (1)
VCE = 2 V, IC = 0.5 A
200
⎯
500
DC current gain
hFE (2)
VCE = 2 V, IC = 1.6 A
120
⎯
⎯
Collector-emitter saturation voltage
VCE (sat)
IC = 1.6 A, IB = 53 mA
⎯
⎯
0.20
V
Base-emitter saturation voltage
VBE (sat)
IC = 1.6 A, IB = 53 mA
⎯
⎯
1.10
V
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
⎯
35
⎯
pF
Rise time
tr
⎯
55
⎯
Storage time
tstg
⎯
310
⎯
Switching time
Fall time
tf
See Figure 1.
VCC ≈ 12 V, RL = 7.5 Ω
IB1 = −IB2 = 53 mA
⎯
25
⎯
ns
Figure 1 Switching Time Test Circuit & Timing Chart
Marking
W
P
Part No. (or abbreviation code)
Lot code (month)
Lot code (year)
Dot: even year
No dot: odd year
IB2
IB1
20
μs
Output
Input
IB2
IB1
VCC
Duty cycle
< 1%



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