3DK208 datasheet(1/2 Pages) ISC

Il numero della parte	3DK208

Spiegazioni elettronici	Silicon NPN Power Transistor

PDF	2 Pages

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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Silicon NPN Power Transistor

3DK208

www.iscsemi.com

1

DESCRIPTION

· High Switching Speed

· High DC Current Gain-

: hFE= 7@ IC= 15A

· Low Collector Saturation Voltage-

: VCE(sat)=1.0V(Min.)@ IC= 10A

APPLICATIONS

· Designed for use in industrial-military power amplifier and

switching circuit applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

500

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

25

A

IB

Base Current-Continuous

5

A

PC

Total Power Dissipation

@ TC=25℃

150

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.83

℃

/W

3

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