Jun, 2012-Ver1.6

N-Channel 30V (D-S) MOSFET

ME7804AS-G

02

Notes:

a. Pulse test: pulse width≦ 300us, duty cycle≦ 2%, Guaranteed by design, not subject to production testing.

b

. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.

Symbol

Parameter

Limit

Min

Typ

Max

Unit

STATIC

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

30

V

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250μA

1.0

3.0

V

IGSS

Gate Leakage Current

VDS=0V, VGS=±20V

±100

nA

IDSS

Zero Gate Voltage Drain Current

VDS=30V, VGS=0V

1

μA

RDS(ON)

Drain-Source On-State Resistance

a

VGS=10V, ID= 10A

14

18

mΩ

VGS=4.5V, ID= 5A

23

30

ｇFS

Forward Transconductance

VDS=5V, ID=8A

14

S

VSD

Diode Forward Voltage

IS=2.3A, VGS=0V

0.76

1.1

V

DYNAMIC

Qg

Gate Charge

VDS=15V, VGS=10V, ID=10A

15.5

nC

Qgt

Total Gate Charge

VDS=15V, VGS=4.5V, ID=10A

7.8

Qgs

Gate-Source Charge

3.2

Qgd

Gate-Drain Charge

3.8

Ciss

Input capacitance

VDS=15V, VGS=0V, f=1MHz

535

pF

Coss

Output Capacitance

95

Crss

Reverse Transfer Capacitance

30

Rg

Gate Resistance

VDS=0V, VGS=0V, F=1MHz

0.9

Ω

td(on)

Turn-On Delay Time

VDD=25V, RL =25Ω

ID=1A, VGEN=10V

RG=6Ω

12

ns

tr

Turn-On Rise Time

9

td(off)

Turn-Off Delay Time

39

tf

Turn-Off Fall Time

6

Electrical Characteristics (TA =25℃ Unless Otherwise Specified)

DCC

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