STGWA30M65DF2 datasheet(1/2 Pages) ISC

Il numero della parte	STGWA30M65DF2

Spiegazioni elettronici	Trench Field-Stop Technology IGBT

PDF	2 Pages

Scroll/Zoom	100%

Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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ISG2180

eq STGWA30M65DF2

Trench Field-Stop Technology IGBT

www.iscsemi.com

1

DESCRIPTION

· Optimized for Low Conduction Losses

· Tight parameters distribution

· Safer Paralleling

· Low thermal resistance

· Soft and very fast recovery anti parallel diode

APPLICATIONS

· PFC Circuits

· Motor Drives

· Uninterruptible power supplies (UPS)

ABSOLUTE MAXIMUM RATINGS

SYMBOL

PARAMETER

VALUE

UNIT

VCES

Collector-Emitter Voltage

650

V

VGES

Gate-Emitter Voltage

±

20

V

IC

Collector Current-Continuous

@ TC=25℃

60

A

IC

Collector Current-Continuous

@ TC=100℃

30

A

ICM

Pulsed Collector Current@ TC=25℃

120

A

PD

Power Dissipation @TC=25℃

258

W

Tj

Operating Junction Temperature

-55~175

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.58

℃

/W

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