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BUZ900DP Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

Il numero della parte BUZ900DP
Spiegazioni elettronici  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUZ900DP Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc N-Channel MOSFET Transistor
BUZ900DP
www.iscsemi.com
1
FEATURES
· Drain Current -ID= 16A@ TC=25℃
· Drain Source Voltage -VDSS= 160V(Min)
· Static Drain-Source On-Resistance
-RDS(on) = 0.75Ω(Max)@VGS= 10V
DESCRIPTION
· Motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
160
V
VGS
Gate-Source Voltage-Continuous
±
14
V
ID
Drain Current-Continuous
16
A
IDM
Drain Current-Single Pulse
64
A
PD
Total Dissipation @TC=25℃
250
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.5
℃
/W


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