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ISCDM7051 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

Il numero della parte ISCDM7051
Spiegazioni elettronici  SiC Schottky Diode
PDF  3 Pages
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCDM7051 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

  ISCDM7051 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCDM7051 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISCDM7051 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISCDM7051
eq GC2X100MPS06-227
SiC Schottky Diode
www.iscsemi.com
1
DESCRIPTION
·
Enhanced Surge Current Capability
·
Extremely Fast Switching Speed
·
175℃ Maximum Operating Temperature
APPLICATIONS
·
Power Factor Correction (PFC)
·
Uninterruptible Power Supply (UPS)
·
Switched Mode Power Supply (SMPS)
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
Peak Repetitive Reverse Voltage
650
V
IF(AV)
Average Rectified Forward Current (per Device)
TC=127℃，D=1
209×2
A
IFSM
Non-Repetitive Peak Forward Surge Current,
Half SineWave (Per Leg)
800
A
IFRM
Repetitive Peak Forward Surge Current,
Half Sine Wave(Per Leg)
480
A
I2t
i2t Value (Per Leg)
3200
A2S
dv/dt
Diode Ruggedness (Per Leg)
200
V/ns
PD
Power Dissipation (Per Leg)
517
W
TJ
Junction Temperature
-55~+175
℃
Tstg
Storage Temperature Range
-55~+175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
TYP.
UNIT
Rth j-c
Thermal Resistance,Junction to Case(Per Leg)
0.28
℃
/W


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