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IXGH60N60C2 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXGH60N60C2 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() ISG2185 eq IXGH60N60C2 IGBT www.iscsemi.com 1 DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.5V@IC=50A · High Current Handling Capability · High Input Impedance APPLICATIONS · Synchronous Rectification in SMPS · Automotive Chargers · UPS,PFC · High Voltage Auxiliaries ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage ± 20 V IC Collector Current-Continuous @ TC=25℃ 75 A IC Collector Current-Continuous @ TC=110℃ 60 A ICM Pulsed Collector Current@ TC= 25℃ 300 A PD Power Dissipation @TC=25℃ 480 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.26 ℃ /W |
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