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ISL73096RHX/SAMPLE Scheda tecnica(PDF) 8 Page - Renesas Technology Corp |
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ISL73096RHX/SAMPLE Scheda tecnica(HTML) 8 Page - Renesas Technology Corp |
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8 / 11 page ![]() ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH FN6475 Rev 4.00 Page 8 of 11 June 27, 2014 Die Characteristics DIE DIMENSIONS: 52.8 mils x 52.0 mils x 14 mils ±1 mil 1340µm x 1320µm x 355.6µm ±25.4µm INTERFACE MATERIALS: Glassivation: Type: Nitride Thickness: 4k Å 0.5kÅ Top Metallization: Type: Metal 1: AlCu (2%)/TiW Thickness: Metal 1: 8k Å ±0.5kÅ Type: Metal 2: AlCu (2%) Thickness: Metal 2: 16k Å ±0.8kÅ Substrate: UHF-1X Bonded Wafer, DI Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Floating ADDITIONAL INFORMATION: Worst Case Current Density: 3.04 x 105A/cm2 Transistor Count: 5 Metallization Mask Layout FIGURE 13. ISL73096RH, ISL73096EH FIGURE 14. ISL73127RH, ISL73127EH (1) Q1C (2) Q2C (3) Q2E (4) Q2B (5) NC (6) Q3C (7) Q3E (8) Q3B (9) Q4B (10) Q4E (11) Q4C (12) Q5C (13) Q5E (14) Q5B (15) Q1B (16) Q1E |
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