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KSC2073 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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KSC2073 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Silicon NPN Power Transistor KSC2073 www.iscsemi.com 1 DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 150V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):1.0V(Max) @IC=500mA APPLICATIONS · Switching Regulators · Vertical Output Application · Power Amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A PC Total Power Dissipation @ Ta=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 5.0 ℃ /W 3 2 1 TO-220C Package Pin 1 Base 2 Collector 3 Emitter |
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