2N1613 datasheet(2/5 Pages) STMICROELECTRONICS

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ELECTRICAL CHARACTERISTICS (T amb =25 °C unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

I CBO

Collector Cutoff Current

(IE =0)

VCB =60 V

T amb =150

°C

µA

I EBO

Emitter Cutoff Current

(IC =0)

VEB =5 V

for 2N 16 13

for 2N 17 11

V(BR) CBO

Collector-base Breakdown

Voltage

I C = 0.1 mA

V(BR)CE R*

Collector-emitter

Breakdown Voltage

(R BE

≤ 10 Ω)

I C =10 mA

V(BR) EBO

Emitter-base Breakdown

Voltage (IC =0)

I E = 0.1 mA

VCE (s at )*

Collector-emitter

Saturation Voltage

I C = 150 mA

I B = 15 mA

0.5

1.5

VBE (sat) *

Base-emitter Saturation

Voltage

I C = 150 mA

I B = 15 mA

0.95

1.3

h FE*

DC Current Gain

for 2 N16 13

I C = 0.01 mA

I C = 0.1 mA

I C =10 mA

I C =150 mA

I C =500 mA

I C =10 mA

T amb =–55

°C

VCE =10 V

120

h FE*

DC Current Gain

for 2 N17 11

I C = 0.01 mA

I C = 0.1 mA

I C =10 mA

I C =150 mA

I C =500 mA

I C =10 mA

T amb =55

°C

VCE =10 V

130

300

h fe

Small Signal Current Gain for 2 N16 13

I C =1 mA

f = 1 kHz

for 2 N17 11

I C =1 mA

f = 1 kHz

VCE =10 V

135

150

300

f t

Transition Frequency

I C =50 mA

f = 20 MHz

VCE =10 V

for 2N 16 13

for 2N 17 11

100

MHz

C EBO

Emitter-base Capacitance

I C =0

f= 1 MHz

VEB = 0.5 V

C CBO

Collector-base

Capacitance

I E =0

f= 1 MHz

VCB =10 V

* Pulsed : pulse duration = 300

µs, duty cycle = 1 %.

THERMAL DATA

Rth j-case

R th j-amb

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max

219

°C/W

2N1613-2N1711

2/5

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