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TLOU267F Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor |
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TLOU267F Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor |
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2 / 4 page ![]() TLOU267(F) 2007-10-01 2 Electrical and Optical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF=20mA ― 2.0 2.4 V Reverse current IR VR=4V ― ― 50 μA Luminous intensity IV IF=20mA (Note) 85 200 ― mcd Peak emission wavelength λp IF=20mA ― (612) ― nm Spectral line half width Δλ IF=20mA ― 15 ― nm Dominant wavelength λd IF=20mA ― 605 ― nm (Note):Lamps are classified into the following ranks according to their luminous intensity, and packed in boxes by each rank. N: 85 −230 mcd, P: 153−414 mcd, Q: 272 mcd− Precaution Please be careful of the followings • Soldering temperature: 260°C max Soldering time: 3 s max (Soldering portion of lead: Up to 1.6mm from the body of the device) • If the lead is formed, the lead should be formed up to 1.6mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. • This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. |
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