DS89C21

SNLS091C – JUNE 1998 – REVISED APRIL 2013

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2) (3)

Supply Voltage (VCC)

7V

Driver Input Voltage (DI)

−1.5V to VCC + 1.5V

Driver Output Voltage (DO, DO *)

−0.5V to +7V

Receiver Input Voltage—V CM

(RI, RI*)

±14V

Differential Receiver Input

±14V

Voltage—VDIFF (RI, RI

*)

Receiver Output Voltage (RO)

−0.5V to VCC +0.5V

Receiver Output Current (RO)

±25 mA

Storage Temperature Range

(TSTG)

−65°C to +150°C

Lead Temperature (TL)

+260°C

(Soldering 4 sec.)

Maximum Junction Temperature

150°C

Maximum Package Power Dissipation @+25°C

D Package

714 mW

Derate D Package

5.7 mW/°C above +25°C

(1)

Absolute Maximum Ratings are those values beyond which the safety of the device cannot be ensured. They are not meant to imply that

the devices should be operated at these limits. The tables of Electrical Characteristics specify conditions for device operation.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

(3)

ESD Rating: HBM (1.5 k

Ω, 100 pF) all pins ≥ 2000V.EIAJ (0Ω, 200 pF) ≥ 250V

Recommended Operating Conditions

Min

Max

Units

Supply Voltage (VCC)

4.50

5.50

V

Operating Temperature (TA)

−40

+85

°C

Input Rise or Fall Time (DI)

500

ns

2

Submit Documentation Feedback

Copyright © 1998–2013, Texas Instruments Incorporated

Product Folder Links: DS89C21