2SA1011 datasheet(1/2 Pages) ISC

Il numero della parte	2SA1011

Spiegazioni elettronici	sc Silicon PNP Power Transistor

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

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sc Silicon PNP Power Transistor

2SA1011

DESCRIPTION

·

Low Collector Saturation Voltage-

: VCE(sat)= -0.5V(Typ.)@ IC= -0.5A

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -160V(Min.)

·

Complement to Type 2SC2344

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for high-voltage switching, audio frequency power

amplifiers, 100W output predriver applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-180

V

VCEO

Collector-Emitter Voltage

-160

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-1.5

A

ICM

Collector Current-Peak

-3.0

A

PC

Total Power Dissipation@ TC=25℃

25

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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