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MMF80R650P Scheda tecnica(PDF) 2 Page - MagnaChip Semiconductor. |
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MMF80R650P Scheda tecnica(HTML) 2 Page - MagnaChip Semiconductor. |
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2 / 10 page ![]() MMF80R650P Datasheet Jul. 2021. Revision 1.2 Magnachip Semiconductor Ltd. 2 Parameter Symbol Rating Unit Note Drain – Source voltage VDSS 800 V Gate – Source voltage VGSS ± 30 V Continuous drain current(2) ID 8 A TC=25oC 5.05 A TC=100oC Pulsed drain current(3) IDM 24 A Power dissipation PD 32 W Single - pulse avalanche energy EAS 340 mJ MOSFET dv/dt ruggedness dv/dt 50 V/ns Diode dv/dt ruggedness(5) dv/dt 15 V/ns Storage temperature Tstg - 55 ~150 oC Maximum operating junction temperature Tj 150 oC 1) ID limited by maximum junction temperature. 2) Pulse width tP limited by Tj,max 3) DC input voltage from all three leads to external heat sink 4) ISD ≤ ID, VDS peak ≤ V(BR)DSS Parameter Symbol Value Unit Thermal resistance, junction-case max Rthjc 3.9 oC/W Thermal resistance, junction-ambient max Rthja 62.5 oC/W Thermal Characteristics Absolute Maximum Rating (Tc=25 oC unless otherwise specified) |
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