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BP104S Scheda tecnica(PDF) 2 Page - OSRAM GmbH

Il numero della parte BP104S
Spiegazioni elettronici  Silizium-PIN-Fotodiode Silicon PIN Photodiode
PDF  5 Pages
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Produttore elettronici  OSRAM [OSRAM GmbH]
Homepage  http://www.osram.com
Logo OSRAM - OSRAM GmbH

BP104S Scheda tecnica(HTML) 2 Page - OSRAM GmbH

  BP104S_01 Datasheet HTML 1Page - OSRAM GmbH BP104S_01 Datasheet HTML 2Page - OSRAM GmbH BP104S_01 Datasheet HTML 3Page - OSRAM GmbH BP104S_01 Datasheet HTML 4Page - OSRAM GmbH BP104S_01 Datasheet HTML 5Page - OSRAM GmbH  
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2001-02-21
2
BP 104 S
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
T
op; Tstg
– 40 … +85
°C
Sperrspannung
Reverse voltage
V
R
20
V
Verlustleistung,
T
A = 25 °C
Total power dissipation
P
tot
150
mW
Kennwerte (
T
A = 25 °C, Normlicht A, T = 2856 K)
Characteristics (
T
A = 25 °C, standard light A, T = 2856 K)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Fotostrom
V
R = 5 V
Photocurrent
I
P
55 (
≥ 40)
nA/lx
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
λ
S max
850
nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von S
max
Spectral range of sensitivity
S = 10% of S
max
λ
400 … 1100
nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area
A
4.84
mm
2
Abmessung der bestrahlungsempfindlichen
Fläche
Dimensions of radiant sensitive area
L
× B
L
× W
2.20
× 2.20
mm
× mm
Abstand Chipoberfläche zu Gehäuseoberfläche
Distance chip front to case surface
H
0.3
mm
Halbwinkel
Half angle
ϕ± 60
Grad
deg.
Dunkelstrom,
V
R = 10 V
Dark current
I
R
2 (
≤ 30)
nA
Spektrale Fotoempfindlichkeit,
λ = 850 nm
Spectral sensitivity
Sλ
0.62
A/W
Quantenausbeute,
λ = 850 nm
Quantum yield
η
0.90
Electrons
Photon



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