4

TLV7081

SNOSD69A – MAY 2018 – REVISED JUNE 2018

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Copyright © 2018, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

Input signals that can swing more than 0.3 V below (V–) must be current-limited to 10 mA or less.

(3)

Short-circuit to ground, one comparator per package.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage VS = (V+) - (V-)

– 0.3

6

V

Input (IN) to (V–)(2)

– 0.3

6

V

Current into input (IN)

±10

mA

Output (OUT) to (V–)

– 0.3

6

V

Output short-circuit duration(3)

10

s

Junction temperature, TJ

150

°C

Storage temperature, Tstg

– 65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic

discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±1500

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±500

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

Supply voltage VS = (V+) - (V-)

1.7

5.5

V

Open-Drain PULL-UP voltage VPULL-UP

5.5

V

Ambient temperature, TA

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1)

TLV7081

UNIT

YKA (DSBGA)

4 PINS

RθJA

Junction-to-ambient thermal resistance

207

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

1.8

°C/W

RθJB

Junction-to-board thermal resistance

73.2

°C/W

ΨJT

Junction-to-top characterization parameter

1

°C/W

ΨJB

Junction-to-board characterization parameter

73.3

°C/W