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LM2623AMM Scheda tecnica(PDF) 5 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Il numero della parte LM2623AMM
Spiegazioni elettronici  General Purpose, Gated Oscillator Based, DC/DC Boost Converter
PDF  11 Pages
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Produttore elettronici  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM2623AMM Scheda tecnica(HTML) 5 Page - National Semiconductor (TI)

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Electrical Characteristics (Continued)
Note 8: Junction to ambient thermal resistance (
θJA) is taken from a thermal modeling result, performed under the conditions and guidelines set forthe in the JEDEC
standard JESD51-17. The test board is a 4 layer FR-4 board measuring 102mm x 76mm x 1.6mm witha3x2 array of thermal vias. The ground plane on the board
is 50mm x 50 mm. Thickness of copper layers are 36mm/18mm/18mm/36mm (1.5oz/10z/1oz/1.5ox). Ambient temperature in simulation is 22˚C, still air. Power
dissipation is 1W. (The DAP is soldered.) Fore more information on LLP thermal topics, as well as LLP mounting and soldering specifications please refer to
Application Note 1187: Leadless Leadframe Package (LLP).
Note 9: Exposed DAP soldered to an exposed 1sq. inch area of 1 oz. copper. Thermal resistance can be decreased by using more copper are to dissipate heat.
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