4

AFE3010

SBFS042 – JUNE 2020

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Copyright © 2020, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply Voltage

VDD1, VDD2

0

26

V

Input Voltage

PH, SCR_TST

–0.3

26

V

REF, FB,

SW_OPEN,

PTT, SEL

–0.3

6

V

Output Voltage

NG_OUT

–0.3

26

V

FT, OUT, SCR,

ALARM

–0.3

6

V

Junction temperature, TJ

150

°C

Storage temperature, Tstg

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per

ANSI/ESDA/JEDEC JS-001, allpins(1)

±2000

V

Charged device model (CDM), per JEDEC

specificationJESD22-C101, all pins(2)

±1000

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VREF, VFB,

VSW_OPEN,

VPTT, VSEL

Input voltage

5.5

V

TA

Ambient temperature

–40

105

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1)

AFE3010

UNIT

RGT (QFN)

16 PINS

RθJA

Junction-to-ambient thermal resistance

49.2

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

56.5

°C/W

RθJB

Junction-to-board thermal resistance

24

°C/W

ΨJT

Junction-to-top characterization parameter

1.8

°C/W

ΨJB

Junction-to-board characterization parameter

24

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

9.4

°C/W