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AP9575GI Scheda tecnica(PDF) 2 Page - Advanced Power Electronics Corp.

Il numero della parte AP9575GI
Spiegazioni elettronici  P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  4 Pages
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Produttore elettronici  A-POWER [Advanced Power Electronics Corp.]
Homepage  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP9575GI Scheda tecnica(HTML) 2 Page - Advanced Power Electronics Corp.

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AP9575GI
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-60
-
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-10A
-
-
70
mΩ
VGS=-4.5V, ID=-8A
-
-
90
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-10A
-
14
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-60V, VGS=0V
-
-
-10
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=-48V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
Qg
Total Gate Charge
2
ID=-10A
-
21
34
nC
Qgs
Gate-Source Charge
VDS=-50V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
11
-
nC
td(on)
Turn-on Delay Time
2
VDS=-30V
-
10
-
ns
tr
Rise Time
ID=-10A
-
18
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
24
-
ns
tf
Fall Time
RD=3Ω
-42
-
ns
Ciss
Input Capacitance
VGS=0V
-
1760
2800
pF
Coss
Output Capacitance
VDS=-25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Rg
Gate Resistance
f=1.0MHz
-
5
8
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=-10A, VGS=0V
-
-
-1.3
V
trr
Reverse Recovery Time
2
IS=-10A, VGS=0V,
-
46
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
100
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT
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