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STGW20V60DF Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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STGW20V60DF Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() ISG2229 eq STGW20V60DF Very High Speed IGBT www.iscsemi.com 2 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case IGBT 0.9 ℃ /W Rth j-c Thermal Resistance,Junction to Case Diode 2.08 ℃ /W STATIC CHARACTERISTICS(TJ = 25 °C unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT VCES Collector-Emitter Breakdown Voltage VGE= 0V, IC= 2mA 600 -- -- V VGE(th) Gate-Emitter Threshold Voltage VGE= VCE, IC= 1mA 5.0 -- 7.0 V VCE(sat) Collector-Emitter Saturation Voltage IC= 20A, VCE= 15V, TJ= 25℃ -- -- 2.2 V IC= 20A, VCE= 15V, TJ= 125℃ -- 2.15 -- V IC= 20A, VCE= 15V, TJ= 175℃ -- 2.3 -- V ICES Zero Gate Voltage Collector Current VCE= 600V, VGE= 0V -- -- 25 uA IGES Gate-Emitter Leakage Current VGE=±20V, VCE= 0V -- -- ± 250 nA VF Diode Forward Voltage Drop IF= 20A -- -- 2.2 V PACKAGE OUTLINE (UNIT: mm) |
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