BAS70 datasheet(1/2 Pages) DAESAN

Il numero della parte	BAS70

Spiegazioni elettronici	Surface Mount Schottky Barrier Diode

PDF	2 Pages

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Produttore elettronici	DAESAN [DAESAN ELECTRONIC CORP.]

Homepage	https://dec.co.kr/

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BAS70

Surface Mount Schottky

Barrier Diode

Case: Molded Plastic

Terminals: Solderable per MIL-STD-202,

Method 208

Polarity: See Diagrams Below

Weight: 0.008 grams (approx.)

Mounting Position: Any

Low Turn-on Voltage

Very Low Capacitance - Less Than 2.0pF @ 0V

Forhighspeedswitchingapplication, circuit

protection

LowForward Voltage-0.75V(Max) @ I = 10 mA

F

K

J

C

H

L

A

B S

G

V

3

1

2

D

To p View

1

2

3

CATHODE

1

ANODE

Dim

Min

Max

A

2.800 3.040

B

1.200 1.400

C

0.890 1.110

D

0.370 0.500

G

1.780 2.040

H

0.013 0.100

J

0.085 0.177

K

0.450 0.600

L

0.890 1.020

S

2.100 2.500

V

0.450 0.600

All Dimension in mm

SOT-23

Rating

Symbol

Value

Unit

Reverse Voltage

VR

70

Volts

Forward Power Dissipation

@ TA = 25

Derate above 25

PF

225

1.8

mW

O

mW/ C

Operating Junction and Storage Temperature Range

TJ, Tstg

-55to +1 50

DE VICE MAR KI NG

BAS70 = BE

ELECTRICAL CHARACTERISTICS

(TA = 25 unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Reverse Breakdown Voltage (I = 10 mA)

R

V(BR)R

70

Volts

Total Capacitance (V = 0 V, f = 1.0 MHz)

R

CT

2.0

pF

Reverse Leakage (V = 50 V)

R

(V = 70 V)

R

IR

0.1

10

mAdc

Forward Voltage (IF = 1.0 mAdc)

VF

410

mVdc

Forward Voltage (IF = 10 mAdc)

VF

750

mVdc

Forward Voltage (IF = 15 mAdc)

VF

1.0

Vdc

Maximum Rating S (T = 1505C unless otherwise noted)

J

O

C

O

C

O

C

O

C

Features

Mechanical Data

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