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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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MUX508IPW Scheda tecnica(PDF) 20 Page - Texas Instruments |
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MUX508IPW Scheda tecnica(HTML) 20 Page - Texas Instruments |
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20 / 42 page  VDD VSS MUX508 A0 A1 A2 VEN RS VS EN S GND CL 1 nF D VOUT VOUT VEN 3 V VOUT QINJ = CL × VOUT VDD VSS Copyright © 2016, Texas Instruments Incorporated 0 V 20 MUX508, MUX509 SBAS758C – JANUARY 2016 – REVISED SEPTEMBER 2016 www.ti.com Product Folder Links: MUX508 MUX509 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated 8.8 Charge Injection The MUX50x have a simple transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QINJ. Figure 32 shows the setup used to measure charge injection. Figure 32. Charge-Injection Measurement Setup |
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