MMBD301 datasheet(1/2 Pages) DAESAN

Il numero della parte	MMBD301

Spiegazioni elettronici	Surface Mount Schottky Barrier Diode

PDF	2 Pages

Scroll/Zoom	100%

Produttore elettronici	DAESAN [DAESAN ELECTRONIC CORP.]

Homepage	https://dec.co.kr/

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1 / 2 page

MMBD301

Surface Mount Schottky

Barrier Diode

Dim

Min

Max

A

2.800 3.040

B

1.200 1.400

C

0.890 1.110

D

0.370 0.500

G

1.780 2.040

H

0.013 0.100

J

0.085 0.177

K

0.450 0.600

L

0.890 1.020

S

2.100 2.500

V

0.450 0.600

All Dimension in mm

SOT-23

K

J

C

H

L

A

B S

G

V

3

1

2

D

To p View

1

2

3

CATHODE

1

ANODE

MAXIMUM RATINGS

MMBD101

Rating

Symbol

Value

Unit

Reverse Voltage

VR

Volts

Forward Power Dissipation

@ TA = 25

Derate above 25

PF

200

2.0

mW

mW/

Operating Junction TEmperature Range

TJ

-55 to +125

Storage Temperature Range

Tstg

-55 to +150

DEVICE MARKING

MMBD701 = 5H

ELECTRICAL

CHARACTERISTICS

(TA = 25 unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage

(IR = 10 Adc)

V(BR)R

Volts

Total Capacitance

(V R = 15Vf =1.0 MHz )Figure 1

CT

0.9

1.5

pF

Reverse Leakage

(IF = 10 mAdc)

VF

13

200

IR

0.52

0.6

o

C

o

C

o

C

o

C

o

C

o

C

* Low Turn-on Voltage

* For UHF and VHF detector application

* Also suitable for someothers Fast Switching

R and digital application

F

* Extremely Low Minority Carrier Lifetime - 15ps(Typ)

* Low Reverse Leakage - IR=13nAdc(Typ)

* Very Low Capacitance-1.5pF(Max)@V=15VR

* Case . Molded Plastic

* Terminals : Solderable per MIL-STD-202,

Method 208

* Polarity : See Diagrams Below

* Weight : 0.008 grams(approx.)

* Mounting Position : Any

30

(V =25V) Figure 3

R

Forward Voltage

Figure4

Forward Voltage (IF = 10 mAdc) Figure4

30

VF

0.38

0.45

NAdc

Vdc

Features

Mechanical Data

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