BD239C datasheet(1/4 Pages) STMICROELECTRONICS

Il numero della parte	BD239C

Spiegazioni elettronici	NPN SILICON POWER TRANSISTOR

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BD239C

NPN SILICON POWER TRANSISTOR

s

STMicroelectronics PREFERRED

SALESTYPE

DESCRIPTION

The BD239C is a silicon epitaxial-base NPN

transistor in Jedec TO-220 plastic package.

It is inteded for use in medium power linear and

switching applications.

®

INTERNAL SCHEMATIC DIAGRAM

April 1999

1

2

3

TO-220

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

VCER

Collector-Emit ter Volt age (RBE =100

Ω)

115

V

VCEO

Collector-Emit ter Volt age (IB =0)

100

V

VEBO

Emitt er-Base Voltage (IC =0)

5

V

IC

Collector Current

2

A

ICM

Collector Peak Current

4

A

IB

Base Current

0.6

A

Ptot

Tot al Dissipation at Tc

≤ 25 oC

30

W

Ptot

Tot al Dissipation at Tamb

≤ 25 oC

2W

Tstg

St orage Temperature

-65 t o 150

oC

Tj

Max. Operat ing Junction Temperat ure

150

oC

1/4

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