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BD336 Scheda tecnica(PDF) 2 Page - STMicroelectronics |
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BD336 Scheda tecnica(HTML) 2 Page - STMicroelectronics |
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2 / 4 page ![]() THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.08 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = -100 V VCB = -100 V TC = 150 oC -0.2 -2 mA mA ICEO Collector Cut-off Current (IB = 0) VCE = -50 V -0.5 mA IEBO Emitter Cut-off Current (IC = 0) VEB = -5 V -5 mA VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = -3 A IB = -12 mA -2 V VBE ∗ Base-Emitter Voltage IC = -3 A VCE = -3 V -2.5 V hFE ∗ DC Current Gain IC = -0.5 A VCE = -3 V IC = -3 A VCE = -3 V IC = -6 A VCE = -3 V 750 2700 400 VF ∗ Parallel Diode Forward Voltage IF = -3 A -1.8 V hfe Small Signal Current Gain IC = -3 A VCE = -3 V f = 1MHz 150 ton Turn on Time IC = -3 A VCC = -30 V IB1 = -IB2 = -12 mA 12 µs toff Turn off Time 5 10 µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 % BD336 2/4 |
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