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EM78F652N Scheda tecnica(PDF) 1 Page - ELAN Microelectronics Corp

Il numero della parte EM78F652N
Spiegazioni elettronici  8-Bit Microcontroller
PDF  3 Pages
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Produttore elettronici  EMC [ELAN Microelectronics Corp]
Homepage  http://www.emc.com.tw
Logo EMC - ELAN Microelectronics Corp

EM78F652N Scheda tecnica(HTML) 1 Page - ELAN Microelectronics Corp

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EM78F652N
8-Bit Microcontroller
Product Specification (V1.2) 08.01.2006
• 1
(This specification is subject to change without further notice)
1
General Description
The EM78F652N is an 8-bit microprocessor designed and developed with low-power,
high-speed CMOS technology and high noise immunity. It has a built-in 2K
×13-bit
Electrical Flash Memory & 256
×8-bit in system programmable EEPROM. It provides
three protection bits to prevent intrusion of user’s Flash memory code. Twelve option
bits are also available to meet user’s requirements.
With its Flash-ROM feature, the EM78F652N provides a convenient way of
developing and verifying user’s programs. Moreover, this Flash-ROM device offers
the advantages of easy and effective program updates, using development and
programming tools. User can avail of the ELAN Writer to easily program his
development code.
2
Features
Operating voltage: 2.0V~5.5V
Operating temperature: -40
°C~85°C
Endurance: 100K write/erase cycles
More than 10 years data retention
Operating frequency range (base on two clocks):
Crystal mode: DC~20MHz at 5V, DC~8MHz at 3V, DC~4MHz at 2.0V
ERC mode: DC~16MHz at 5V, DC~8MHz at 3V, DC~4MHz at 2.0V
IRC mode: DC~16MHz at 4.5~5.5V, DC~4MHz at 2.0V~5.5V
Low power consumption:
Less than 2 mA at 5V/4MHz
20 µA Typical at 3V/32kHz
2 µA Typical, during sleep mode
2K
×13 bits Flash memory
Four programmable Level Voltage Detector (LVD)
Vdd power monitor and support low voltage detector interrupt flag
Three security registers to prevent intrusion of Flash memory codes
One configuration register to accommodate user’s requirements
144
×8 bits on-chip registers (SRAM, general purpose register)
256 bytes in-system programmable EEPROM
Endurance: 100,000 write/erase cycles


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