BDX54F datasheet(1/4 Pages) STMICROELECTRONICS

Il numero della parte	BDX54F

Spiegazioni elettronici	SILICON PNP POWER DARLINGTON TRANSISTOR

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BDX54F

SILICON PNP POWER

DARLINGTON TRANSISTOR

s

STMicroelectronics PREFERRED

SALESTYPE

s

MONOLITHIC DARLINGTON

CONFIGURATION

s

INTEGRATED ANTIPARALLEL

COLLECTOR-EMITTER DIODE

APPLICATIONS

s

LINEAR AND SWITCHING INDUSTRIAL

EQUIPMENT

DESCRIPTION

The BDX54F

is a silicon Epitaxial-Base PNP

power

transistor

in

monolithic

Darlington

configuration, mounted in Jedec TO-220 plastic

package. It is intented for use in power linear and

switching applications.

INTERNAL SCHEMATIC DIAGRAM

January 2000

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage (IE = 0)

160

V

VCEO

Collector-Emitter Voltage (IB = 0)

160

V

VEBO

Emitter-base Voltage (IC = 0)

5

V

IC

Collector Current

8

A

ICM

Collector Peak Current

12

A

IB

Base Current

0.2

A

Ptot

Total Dissipation at Tc

≤ 25 oC

60

W

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. Operating Junction Temperature

150

oC

1

2

3

TO-220

R1 Typ. = 10 K

Ω

R2 Typ. = 150

Ω

®

1/4

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