BU931P datasheet(2/7 Pages) STMICROELECTRONICS

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THERMAL DATA

TO-3

TO-218

Rthj-ca se

Thermal Resistance Junction-case

Max

1.1

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICES

Collect or Cut-off

Current (VBE =0)

VCE =500 V

Tj = 125

100

0.5

µA

ICEO

Collect or Cut-off

Current (IB =0)

VCE =450 V

Tj = 125

100

0.5

µA

IEBO

Emitt er Cut-off Current

(IC =0)

VEB =5 V

VCEO(sus )

∗ Collector-Emitter

Sustaining Voltage

(IB =0)

IC = 100 mA

L = 10 mH

VClamp = 400 V

(See F ig.4)

400

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =7 A

IB =70 mA

IC =8 A

IB =100 mA

IC =10 A

IB = 250 mA

1.6

1.8

VBE(s at)

∗ Base-Emitter

Saturat ion Voltage

IC =7 A

IB =70 mA

IC =8 A

IB =100 mA

IC =10 A

IB = 250 mA

2.2

2.4

2.5

hFE

∗

DC Current G ain

IC =5 A

VCE = 10 V

300

Diode Forward Volt age

IF =10 A

2.5

Funct ional Test

(see f ig. 1)

VCC =24 V

Vcl amp = 400 V

L= 7mH

INDUCTIVE LOAD

St orage Time

Fall T ime

(see f ig. 3)

VCC =12 V

Vcl amp = 300 V

L= 7mH

IC =7 A

IB =70 mA

VBE =0

RBE =47

Ω

0.5

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area

DC Current Gain

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