TVS Diodes

ES1x Series

Page <2>

10/05/12 V1.1

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Notes : 1. Reverse recovery test conditions : IF = 0.5 A, IR = 1 A, I RR = 0.25 A

2. Measured at 1 MHz and applied VR = 4 V

3. PCB mounted on 0.2 × 0.2 inches (5 × 5 mm) copper pad area

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For

capacitive load, derate current by 20%

Ratings and Characteristic Curves (ES1A, ES1F, ES1G, ES1H and ES1J)

Maximum Forward Current Derating Curve

Lead Temperature (°C)

Type Number

Symbol

ES1A

ES1F

ES1G

ES1H

ES1J

Units

Maximum Recurrent Peak Reverse Voltage

VRRM

50

300

400

500

600

V

Maximum RMS Voltage

VRMS

35

210

280

350

420

Maximum DC Blocking Voltage

VDC

50

300

400

500

600

Maximum Average Forward Rectified Current

I(AV)

1

A

Peak Forward Surge Current, 8.3 ms Single

Half Sine-wave Superimposed on Rated

Load (JEDEC method )

IFSM

30

Maximum Instantaneous Forward Voltage at 1 A

VF

0.95

1.3

1.7

V

Maximum DC Reverse Current at TA = 25°C

at Rated DC Blocking Voltage at TA = 100°C

IR

5

100

µA

Maximum Reverse Recovery Time (Note 1)

Trr

35

nS

Typical Junction Capacitance ( Note 2 )

Cj

10

8

pF

Maximum Thermal Resistance (Note 3)

RθJA

RθJL

85

35

°C / W

Operating Temperature Range

TJ

-55 to 150

°C

Storage Temperature Range

TSTG

Maximum Non-Repetitive Peak Forward Surge Current

Number of Cycles at 60 Hz