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STM32F446VC Scheda tecnica(PDF) 80 Page - STMicroelectronics |
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STM32F446VC Scheda tecnica(HTML) 80 Page - STMicroelectronics |
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80 / 202 page ![]() Electrical characteristics STM32F446xC/E 80/202 DocID027107 Rev 6 6.3.5 Reset and power control block characteristics The parameters given in Table 21 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 16. Table 21. reset and power control block characteristics Symbol Parameter Conditions Min Typ Max Unit VPVD Programmable voltage detector level selection PLS[2:0]=000 (rising edge) 2.09 2.14 2.19 V PLS[2:0]=000 (falling edge) 1.98 2.04 2.08 V PLS[2:0]=001 (rising edge) 2.23 2.30 2.37 V PLS[2:0]=001 (falling edge) 2.13 2.19 2.25 V PLS[2:0]=010 (rising edge) 2.39 2.45 2.51 V PLS[2:0]=010 (falling edge) 2.29 2.35 2.39 V PLS[2:0]=011 (rising edge) 2.54 2.60 2.65 V PLS[2:0]=011 (falling edge) 2.44 2.51 2.56 V PLS[2:0]=100 (rising edge) 2.70 2.76 2.82 V PLS[2:0]=100 (falling edge) 2.59 2.66 2.71 V PLS[2:0]=101 (rising edge) 2.86 2.93 2.99 V PLS[2:0]=101 (falling edge) 2.65 2.84 3.02 V PLS[2:0]=110 (rising edge) 2.96 3.03 3.10 V PLS[2:0]=110 (falling edge) 2.85 2.93 2.99 V PLS[2:0]=111 (rising edge) 3.07 3.14 3.21 V PLS[2:0]=111 (falling edge) 2.95 3.03 3.09 V VPVDhyst(1) PVD hysteresis - - 100 - mV VPOR/PDR Power-on/power-down reset threshold Falling edge 1.60 1.68 1.76 V Rising edge 1.64 1.72 1.80 V VPDRhyst(1) PDR hysteresis - - 40 - mV VBOR1 Brownout level 1 threshold Falling edge 2.13 2.19 2.24 V Rising edge 2.23 2.29 2.33 V VBOR2 Brownout level 2 threshold Falling edge 2.44 2.50 2.56 V Rising edge 2.53 2.59 2.63 V VBOR3 Brownout level 3 threshold Falling edge 2.75 2.83 2.88 V Rising edge 2.85 2.92 2.97 V VBORhyst(1) BOR hysteresis - - 100 - mV TRSTTEMPO (1)(2) POR reset temporization - 0.5 1.5 3.0 ms |
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