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BUV27 Scheda tecnica(PDF) 2 Page - STMicroelectronics

Il numero della parte BUV27
Spiegazioni elettronici  MEDIUM POWER NPN SILICON TRANSISTOR
PDF  4 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BUV27 Scheda tecnica(HTML) 2 Page - STMicroelectronics

  BUV27 Datasheet HTML 1Page - STMicroelectronics BUV27 Datasheet HTML 2Page - STMicroelectronics BUV27 Datasheet HTML 3Page - STMicroelectronics BUV27 Datasheet HTML 4Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
1.76
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICER
Collector Cut-off
Current (RBE = 5
0Ω)
VCE = 240V Tc = 125
o C
3mA
ICEX
Collector Cut-off
Current
VCE = 240V VBE = -1.5V Tc = 125
oC1
mA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
1
mA
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
IC = 0.2 A
L = 25mH
120
V
VEBO
Emitter-Base Voltage
(IC = 0)
IE = 50mA
7
30
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 4A
IB = 0.4A
IC = 8A
IB = 0.8A
0.7
1.5
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 8A
IB = 0.8A
2
V
ton
ts
tf
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
VCC = 90V
IC = 8A
VBE = - 6V
IB1 = 0.8A
RBB = 3.75
Ω
0.4
0.5
0.12
0.8
1.2
0.25
ms
µs
µs
ts
tf
ts
tf
INDUCTIVE LOAD
Storage time
Fall Time
Storage Time
Fall Time
VCC = 90V
IC
= 8A
IB1
= 0.8A
VBE = - 5V
LB
= 1
µH
VCC = 90V
IC
= 8 A
IB1
= 0.8A
VBE = - 5V
LB
= 1
µH
Tj
= 125
o C
0.6
0.04
2
0.15
µs
µs
µs
µs
∗ Pulsed: Pulse duration = 300µs, duty cycle = 2 %
BUV27
2/4



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