Page <1>

V1.0

16/09/19

Bipolar Transistor

Newark.com/multicomp-pro

Farnell.com/multicomp-pro

Element14.com/multicomp-pro

Maximum Ratings:

Characteristic

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

40

V

Collector - Emitter Voltage

VCEO

Emitter - Base Voltage

VEBO

7

Continuous Collector Current

IC

1

A

Total Device Dissipation (TA = +25°C),

Derate above 25°C

PD

1

5.7

W

mW/°C

Total Device Dissipation(TC = +25°C),

Derate above 25°C

6

34

Operating Junction Temperature,

TJ

-65 to +200

°C

Storage Temperature Range,

Tstg

-65 to +200

Thermal Resistance, Junction-to-Case,

RthJC

29

°C/W

Lead Temperature (During Soldering,1/16"

from case, 60 sec max)

TL

300

°C

Description:

This is a silicon PNP transistor in a TO-39 type case designed primarily for amplifier and switching applications. This device

features high breakdown voltage, low leakage current, low capacity, and beta useful over an extremely wide current range.

Collector

3

2

Base

1

Emitter