BUY49S datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-case-ambient

Max

175

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0 )

VCB = 200 V

Tcase = 150

0.1

µA

V(BR)CBO* Collector-Base

Breakdown Voltage

(IE = 0 )

IC = 100

µA

250

VCEO(sus)* Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 20 mA

200

VEBO*

Emitter-base Voltage

(IC = 0)

IE = 1 mA

VCE(sat)*

Collector-Emitter

Saturation Voltage

IC = 0.5 A

IB = 50 mA

0.2

VBE(sat)*

Collector-Emitter

Saturation Voltage

IC = 0.5 A

IB = 50 mA

1.1

hFE*

DC Current Gain

IC = 20 mA

VCE = 5 V

IC = 0.5 A

VCE = 5 V

IC = 20 mA

VCE = 2 V

Tcase = - 55

Transistor Frequency

IC = 100 mA

VCE = 10 V

MHz

CCBO

Collector-base

Capacitance

IE = 0

VCB = 10 V

f = 1 MHz

ton

Turn-on Time

IC = 0.5 A

VCC = 20 V

0.3

µs

toff

Turn-off Time

IB1 = - IB2 = 50 mA

µs

Is/b**

Second Breakdown

Collector Current

VCE = 50 V

0.2

∗ Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %

∗∗ Pulsed: 1 s, non repetitive pulse.

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