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PUSB3AB4 Scheda tecnica(PDF) 3 Page - Nexperia B.V. All rights reserved |
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PUSB3AB4 Scheda tecnica(HTML) 3 Page - Nexperia B.V. All rights reserved |
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3 / 13 page ![]() © Nexperia B.V. 2017. All rights reserved PUSB3AB4 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 4 May 2016 3 of 13 Nexperia PUSB3AB4 ESD protection for ultra high-speed interfaces 6. Characteristics [1] This parameter is guaranteed by design. [2] 100 ns Transmission Line Pulse (TLP); 50 ; pulser at 80 ns. [3] According to IEC 61000-4-5 (8/20 s current waveform). Table 5. Characteristics Tamb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VBR breakdown voltage II =1 mA 5.5 9 - V ILR reverse leakage current per channel; VI =5V - <1 100 nA Cline line capacitance f = 1 MHz; VI =1.5 V [1] - 0.17 0.2 pF rdyn dynamic resistance TLP [2] positive transient - 0.4 - negative transient - 0.4 - Vsbck snapback voltage II = 1 A; TLP 100/10 ns - 3.3 - V VCL clamping voltage IPP = 5 A; positive transient [3] -5 -V IPP = 5A; negative transient [3] - 5- V |
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