| Motore di ricerca datesheet componenti elettronici |
|
STW11NM80 Scheda tecnica(PDF) 5 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STW11NM80 Scheda tecnica(HTML) 5 Page - STMicroelectronics |
|
5 / 17 page ![]() STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 Electrical characteristics 5/17 Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 11 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 44 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=11 A, VGS=0 0.86 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=11 A, di/dt = 100 A/µs, VDD=50 V, Tj=25 °C 612 7.22 23.6 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=11 A, di/dt = 100 A/µs, VDD=50 V, Tj=150 °C 970 11.25 23.2 ns µC A |
|
|
Link URL |
| Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | Collegamento alla scheda tecnica | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |