MB85RC64TA datasheet(18/41 Pages) RAMXEED

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MB85RC64TA

DS501-00044-5v1-E



POWER ON/OFF SEQUENCE

If the device does not operate within the specified conditions of read cycle, write cycle or power on/off

sequence, memory data can not be guaranteed.



FeRAM CHARACTERISTICS

*1 : Total number of reading and writing defines the minimum value of endurance, as an FeRAM memory

operates with destructive readout mechanism.

*2 : Minimum values define retention time of the first reading/writing data right after shipment, and these values

are calculated by qualification results.

Parameter

Symbol

Value

Unit

Min

Max

SDA, SCL level hold time during power down

tpd



SDA, SCL level hold time during power up

tpu

250





Power supply rising time

0.05



ms/V

Power supply falling time

0.1



ms/V

Internal regulator recovery time

tREC



400



Item

Min

Max

Unit

Parameter

Read/Write Endurance*1

1013



Times/byte Operation Ambient Temperature TA   105 C

Data Retention*2

19.1



Years

Operation Ambient Temperature TA   105 C

70.4



Operation Ambient Temperature TA   85 C

* : SDA, SCL (Max) < VDD  0.5 V

SDA, SCL > VDD × 0.7 *

tpd

tpu

VIL (Max)

VIH (Min)

VDD (Min)

VDD

SDA, SCL : Don't care

SDA, SCL

VIL (Max)

VIH (Min)

VDD (Min)

VDD

VSS

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