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STPS30L60CW Scheda tecnica(PDF) 4 Page - STMicroelectronics |
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STPS30L60CW Scheda tecnica(HTML) 4 Page - STMicroelectronics |
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4 / 13 page ![]() Characteristics STPS30L60C 4/13 Doc ID 6479 Rev 10 Figure 6. Relative variation of thermal impedance junction to case versus pulse duration Figure 7. Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAB) 1E-4 1E-3 1E-2 1E-1 1E+0 0.0 0.2 0.4 0.6 0.8 1.0 Z/R th(j-c) th(j-c) t (s) p Single pulse δ = 0.1 δ = 0.2 δ = 0.5 TO-220AB, TO-220 narrow leads TO-247, D2PAK, I2PAK 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 δ=0.1 δ=0.2 δ=0.5 Single pulse T δ=tp/T tp Z/R th(j-c) th(j-c) t (s) p Figure 8. Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 9. Junction capacitance versus reverse voltage applied (typical values, per diode) 0 5 10 15 20 25 30 35 40 45 50 55 60 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 I (mA) R Tj=125°C Tj=25°C Tj=150°C Tj=100°C Tj=75°C Tj=50°C V (V) R 1 10 100 0.1 0.2 0.5 1.0 2.0 C(nF) F=1MHz Tj=25°C VR(V) |
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