STPS20L45C datasheet(4/15 Pages) STMICROELECTRONICS

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Characteristics

STPS20L45C

4/15

DocID8001 Rev 5

1.1

Characteristics (curves)

Figure 1: Average forward power dissipation

versus average forward current (per diode)

Figure 2: Average forward current versus ambient

temperature (δ = 0.5, per diode)

Figure 3: Normalized avalanche power deratings

versus pulse duration (Tj = 125 °C)

Figure 4: Reverse leakage current versus reverse

voltage applied (typical values, per diode)

Figure 5: Relative variation of thermal impedance

junction to case versus pulse duration

(TO-220AB, D²PAK)

Figure 6: Relative variation of thermal impedance

junction to case versus pulse duration

(TO-220FPAB)

= tp/T

δ = 0.05

δ = 1

δ = 0.5

δ = 0.2

δ = 0.1

PF(AV)(W)

IF(AV) (A)

2 5

5 0

7 5

100

125

150

= tp/T

Tamb(°C)

IF(AV)(A)

TO-220FPAB

Rth(j-a) = Rth(j-c)

Rth(j-a) = 15 °C/W

TO-220AB

(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

2E+2

IR(mA)

Tj = 150 °C

Tj = 125 °C

Tj = 75 °C

Tj = 25 °C

VR(V)

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

= tp/T

t (s )

Zth(j-c)/Rth(j-c)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

1E-3

1E-2

1E-1

0.0

0.2

0.4

0.6

0.8

1.0

t (s )

= tp/T

Zth(j-c)/Rth(j-c)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

1E+0

1E+1

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