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FERD30M45D Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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FERD30M45D Scheda tecnica(HTML) 3 Page - STMicroelectronics |
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3 / 7 page ![]() FERD30M45D Characteristics DocID029291 Rev 2 3/7 1.1 Characteristics (curves) Figure 1: Average forward current versus ambient temperature (δ = 0.5) Figure 2: Relative variation of thermal impedance junction to case versus pulse duration Figure 3: Reverse leakage current versus reverse voltage applied (typical values) Figure 4: Junction capacitance versus reverse voltage applied (typical values) Figure 5: Forward voltage drop versus forward current (typical values) Figure 6: Forward voltage drop versus forward current (typical values) 0 10 20 30 40 50 0 25 50 75 100 125 150 175 Tamb(°C) T δ = tp/T tp IF(AV)(A) Rth(j-a) = Rth(j-c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 tp(s) Single pulse Zth(j-c)/Rth(j-c) 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 0 5 10 15 20 25 30 35 40 45 VR(V) Tj = 125 °C Tj = 25 °C Tj = 50 °C Tj = 75 °C Tj = 100 °C Tj = 150 °C IR(mA) 100 1000 10000 1 10 100 VR(V) F = 1 MHz Vosc= 30 mVRMS Tj = 25 °C C(pF) |
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