Characteristics

STPS3045DJF-Y

2/10

DocID027757 Rev 1

1

Characteristics

Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified, anode

terminals short circuited)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

Tj = -40 °C to +175 °C

45

V

IF(RMS) Forward rms current

45

A

IF(AV)

Average forward current

Tc = 130 °C, δ = 0.5

30

A

IFSM

Surge non repetitive forward current tp = 10 ms sinusoidal

380

A

PARM

Repetitive peak avalanche power

tp = 10 µs

Tj = 125 °C

900

W

Tstg

Storage temperature range

-65 to +175

°C

Tj

Operating junction temperature(1)

1.

condition to avoid thermal runaway for a diode on its own heatsink.

For pulse time duration deratings, please refer to Figure 3. More details regarding the avalanche energy

measurements and diode validation in the avalanche are provided in the STMicroelectronics Application

notes AN1768, “Admissible avalanche power of schottky diodes” and AN2025, “Converter improvement

using Schottky rectifier avalanche specification”.

-40 to +175

°C

Table 3. Thermal resistance

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

2.0

°C/W

dPtot

dTj

<

1

Rth(j-a)