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STPSC20H12DY Scheda tecnica(PDF) 4 Page - STMicroelectronics |
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STPSC20H12DY Scheda tecnica(HTML) 4 Page - STMicroelectronics |
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4 / 14 page ![]() Figure 5. Relative variation of thermal impedance junction to case versus pulse duration 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 tp (s) Single pulse Zth(j-c)/Rth(j-c) Figure 6. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) 1.E+02 1.E+03 1.E-05 1.E-04 1.E-03 1.E-02 tp(s) Ta= 25 °C Ta= 150 °C IFSM(A) Figure 7. Total capacitive charges versus reverse voltage applied (typical values) 0 20 40 60 80 100 120 140 0 100 200 300 400 500 600 700 800 VR(V) Qcj(nC) Figure 8. Thermal resistance junction to ambient versus copper surface under tab (typical values, epoxy printed board FR4, eCu = 70 μm) 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 Rth(j-a) (°C/W) D²PAK / D²PAK HV Epoxy printed board FR4, copper thickness = 70 µm SCu(cm²) STPSC20H12-Y Characteristics (curves) DS11830 - Rev 4 page 4/14 |
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