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TLV2170IDRG4 Scheda tecnica(PDF) 7 Page - Texas Instruments |
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TLV2170IDRG4 Scheda tecnica(HTML) 7 Page - Texas Instruments |
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7 / 47 page ![]() 7 TLV170, TLV2170, TLV4170 www.ti.com SBOS782A – NOVEMBER 2016 – REVISED MAY 2018 Product Folder Links: TLV170 TLV2170 TLV4170 Submit Documentation Feedback Copyright © 2016–2018, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) Short-circuit to ground, one amplifier per package. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Voltage Supply voltage, [(V+) – (V −)] 40 V Single-supply voltage 40 Signal input pin (V −) − 0.5 (V+) + 0.5 Current Signal input pin –10 10 mA Output short-circuit(2) Continuous Temperature Operating, TA –55 150 °C Junction, TJ 150 Storage, Tstg –65 150 (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±750 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT Voltage Supply, VS = (V+) – (V–) 2.7 36 V TA Specified temperature –40 125 °C TA Operating temperature –55 150 °C |
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