Figure 1. Current and voltage waveforms for avalanche energy test across D.U.T (device under test)

VCL_DUT

IAS

i(t), v(t)

t

tp

IDUT

IL

Figure 2. Unclamped inductive switching test circuit

EAS=12×L×IAS²×   VCLDUT

VCLDUT−VDD ≅12×L×IAS²

tp=   L×IAS

VCLDUT−VDD

Figure 3. Thermal transient impedance model circuit of the diode – Zth(j-c)

Table 4. Components typical values of the diode thermal transient impedance model Zth(j-c)

Ref.

Value (mK/W)

Ref.

Value (mJ/K)

Rth1

5.07

Cth1

2.06

Rth2

24.79

Cth2

2.91

Rth3

80.63

Cth3

4.7

Rth4

71.13

Cth4

11.05

Rth5

18.59

Cth5

201.31

STPST80H100-Y

Characteristics

DS14555 - Rev 2

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