STTH1R04AY datasheet(4/12 Pages) STMICROELECTRONICS

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Characteristics

STTH1R04-Y

4/12

DocID024449 Rev 2

1.1

Characteristics (curves)

Figure 1: Conduction losses versus average

forward current

Figure 2: Forward voltage drop versus forward

current

Figure 3: Relative variation of thermal impedance

junction to case ambient versus pulse duration

(SMA)

Figure 4: Relative variation of thermal impedance

junction to case ambient versus pulse duration

(SMB)

Figure 5: Junction capacitance versus reverse

voltage applied (typical values)

Figure 6: Reverse recovery charges versus

dIF / dt (typical values)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.0

0.2

0.4

0.6

0.8

1.0

1.2

(W)

F( AV )

δ=tp/T

(

F( AV )

δ = 1

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

FM (A)

0.1

1.0

10.0

100.0

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

4.4

j =150°C

(Maximum values)

j =150°C

(Typical values)

j =25°C

(Maximum values)

FM(V)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Single pulse

SMA

S cu = 1cm²

th (j-a)

th(j-a)

t P(s)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Single pulse

tP(s)

SMB

= 1 cm

th (j-a)

th(j-a)

100

1000

C(pF)

F=1MHz

OSC=30mVRMS

j=25°C

VR(V)

100

1000

RR(nC)

F= 1 A

R =320 V

j=125 °C

j=25 °C

dIF/dt(A/µs)

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