TLV8541DBVR datasheet(21/42 Pages) TI2

Il numero della parte	TLV8541DBVR

Spiegazioni elettronici	TLV854x 500-nA, RRIO, Nanopower Operational Amplifiers for Cost-Optimized Systems

PDF	42 Pages

Scroll/Zoom	100%

Produttore elettronici	TI2 [Texas Instruments]

Homepage	https://www.ti.com

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21 / 42 page

OUTA

-INA

+INA

V+

+INB

-INB

OUTB

OUTD

-IND

+IND

V-

+INC

-INC

OUTC

VOUTA

GND

VIN

Place components close to

device and to each other to

reduce parasitic error

Run the input traces as

far away from the supply

lines as possible

GND

V+

Place low-ESR ceramic

bypass capacitor close to

device

GND

TLV8544, TLV8542, TLV8541

www.ti.com

SNOSD29E – DECEMBER 2016 – REVISED APRIL 2018

Product Folder Links: TLV8544 TLV8542 TLV8541

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11 Layout

11.1 Layout Guidelines

•

The V+ pin must be bypassed to ground with a low ESR capacitor.

•

The optimum placement is closest to the V+ and ground pins.

•

Take care to minimize the loop area formed by the bypass capacitor connection between V+ and ground.

•

Connect the ground pin to the PCB ground plane at the pin of the device.

•

Place the feedback components as close as possible to the device to minimize stray impedance.

11.2 Layout Example

Figure 38. Layout Example of a Typical Dual Channel Package (Top View)

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