STTH4R02SY datasheet(4/14 Pages) STMICROELECTRONICS

4 / 14 page

Characteristics

STTH4R02-Y

4/14

DocID17391 Rev 2

Figure 5: Relative variation of thermal impedance,

junction to ambient, versus pulse duration (SMB)

Figure 6: Relative variation of thermal impedance,

junction to ambient, versus pulse duration (SMC)

Figure 7: Junction capacitance versus reverse

applied voltage (typical values)

Figure 8: Reverse recovery charges versus dlF/dt

(typical values)

Figure 9: Reverse recovery time versus dlF/dt

(typical values)

Figure 10: Peak reverse recovery current versus

dlF/dt (typical values)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Zth(j-a)/Rth(j-a)

(s)

SMB

SCU = 1 cm²

0.0

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

0.1

Zth(j-a)/Rth(j-a)

tP(s)

SMC

CU = 1 cm²

100

1000

C(pF)

(V)

F = 1 MHz

OSC

= 30 mV

RMS

= 25 °C

100

120

100

150

200

250

300

350

400

450

500

(nC)

= 125 °C

/dt (A/µs)

= 25 °C

= 4 A

VR= 160 V

100

1000

tRR(ns)

= 125 °C

dlF/dt (A/µs)

= 25 °C

= 4 A

= 160 V

100

150

200

250

300

350

400

450

500

IRM(A)

j = 125 °C

dlF/dt (A/µs)

j = 25 °C

F = 4 A

R = 160 V

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