STTH1302 datasheet(4/11 Pages) STMICROELECTRONICS

4 / 11 page

Characteristics

STTH1302

4/11

DocID8794 Rev 4

1.1

Characteristics (curves)

Figure 1: Average forward power dissipation

versus average forward current (per diode)

Figure 2: Peak current versus duty cycle

(per diode)

Figure 3: Forward voltage drop versus forward

current (per diode)

Figure 4: Relative variation of thermal impedance

junction to case versus pulse duration

Figure 5: Average forward current versus ambient

temperature (δ = 0.5, per diode)

Figure 6: Junction capacitance versus reverse

voltage applied (typical values, per diode)

(W)

F(AV)

345

(A)

F(AV)

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

δ=tp/T

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

P=5W

P=2W

P=10W

I (A)

δ=tp/T

0.1

1.0

10.0

100.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

VF (V)

IF (A)

Tj = 25 °C

Maximum values

Tj = 125 °C

Maximum values

Tj = 125 °C

Typical values

Zth

/ Rth

(j-c)

0.1

1.0

1.E-03

1.E-02

1.E-01

1.E+00

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

δ=tp/T

tp(s)

100

125

150

175

(°C)

amb

Rth

=Rth

(j-a)

(j-c)

D²PAK (S=1cm²)

Rth

=50°C/W

(j-a)

D²PAK

(A)

F(AV)

100

1000

VR (V)

C (pF)

F = 1 MHz

Vosc = 30 mVRMS

Tj = 25 °C

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