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DSC04A065LP Scheda tecnica(PDF) 1 Page - Diodes Incorporated

Il numero della parte DSC04A065LP
Spiegazioni elettronici  650V SiC Schottky Diodes with Exceptionally Low FOM Provide Highest Efficiency for Power Solutions
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Produttore elettronici  DIODES [Diodes Incorporated]
Homepage  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DSC04A065LP Scheda tecnica(HTML) 1 Page - Diodes Incorporated

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diodes.com
Announcement
New Product
The DIODES Advantage
These low-loss devices boost power density and efficiency,
reducing cooling needs in compact designs.
Diodes Incorporated has extended its
silicon carbide (SiC) portfolio with a series
of five high-performance low figure-of-merit
(FOM) 650V SiC Schottky diodes.
Rated at 4A, 6A, 8A, 10A, and 12A, the
DSCxxA065LP series is packaged in the
ultra-thermally efficient T-DFN8080-4 and is
designed for high-efficiency power switching
applications, such as DC-to-DC and AC-to-
DC conversion, renewable energy, data
centers (especially those that process
heavy artificial intelligence (AI) workloads),
and industrial motor drives.
These SiC Schottky diodes offer superior
power switching performance compared to
silicon alternatives. They have negligible
switching losses due to the absence of
reverse recovery current and their low
capacitive charge (QC), making them
suitable for high-speed switching circuits.
Their low forward voltage (VF) minimizes
conduction losses and further increases
overall power efficiency. These combine to
provide an exceptionally low FOM,
expressed as:
FOM= Q
C x VF
The devices’ compact and low-profile
T-DFN8080-4 (typ. 8mm x 8mm x 1mm)
surface mount package incorporates a large
underside heat pad, providing reduced
thermal resistance. This benefits circuit
designs with increased power density,
reduced overall solution size, and a lower
cooling budget. T-DFN8080-4 is an ideal
alternative for TO252 (DPAK).
DSCxxA065LP
▪ Exceptionally Low FOM (Q
C x VF)
Enables higher system efficiency designs, reducing running
and cooling costs
▪ Minimal Reverse Leakage Current (I
R = 20µA Max.)
Minimizes heat dissipation
▪ High Temperature Operation up to 175°C
Enhances system reliability in harsh environments
▪ Forward Voltage Positive Temperature Coefficient
Ensures operational stability and supports device paralleling
▪ High Surge Current Capability
Boosts robustness
▪ Totally Lead-Free and Fully RoHS Compliant
Promotes environmentally responsible designs
April 2025
The Diodes logo is a registered trademark of Diodes
Incorporated in the United States and other countries.
All other trademarks are the property of their respective
owners.
© 2025 Copyright Diodes Incorporated. All Rights
Reserved.
Applications
Circuit Functions
▪ Power factor correction
▪ AC/DC & DC/DC converters
▪ Solar inverters
▪ Switched-mode power supplies
▪ AI server PSU, data centers
▪ Uninterruptible power supplies
▪ Motor drives
▪ PFC boost diodes
▪ Reverse-polarity protection
▪ Electrical over-stress
protection
▪ Free-wheeling diodes
▪ Snubber circuits
650V SiC Schottky Diodes with Exceptionally Low FOM
Provide Highest Efficiency for Power Solutions


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